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MCR8SD, MCR8SM, MCR8SN
Preferred Device
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed.
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* Sensitive Gate Allows Triggering by Microcontrollers and other * * * * * * * *
Logic Circuits Blocking Voltage to 800 Volts On-State Current Rating of 8 Amperes RMS at 80C High Surge Current Capability - 80 Amperes Rugged, Economical TO-220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dv/dt - 5 V/msec Minimum at 110C Pb-Free Packages are Available*
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SCRs 8 AMPERES RMS 400 thru 800 VOLTS
G A K
MARKING DIAGRAM
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8SD MCR8SM MCR8SN On-State RMS Current (180 Conduction Angles; TC = 80C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 110C) Circuit Fusing Consideration (t = 8.33 ms) Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 80C) Forward Average Gate Power (t = 8.3 ms, TC = 80C) Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 80C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 8.0 80 26.5 5.0 0.5 2.0 -40 to 110 -40 to 150 A A A2sec W W A C C MCR8SD MCR8SDG MCR8SM MCR8SMG MCR8SN MCR8SNG 1 2 3 4 Value Unit V 2 3
AY WW MCR8SxG AKA TO-220AB CASE 221A-09 STYLE 3 A Y WW x G AKA = Assembly Location = Year = Work Week = D, M, or N = Pb-Free Package = Diode Polarity
PIN ASSIGNMENT
Cathode Anode Gate Anode
ORDERING INFORMATION
Device Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
Preferred devices are recommended choices for future use and best overall value.
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December, 2005 - Rev. 3
Publication Order Number: MCR8S/D
MCR8SD, MCR8SM, MCR8SN
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA TL Value 2.2 62.5 260 Unit C/W C
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VD = Rated VDRM and VRRM; RGK = 1 kW) ON CHARACTERISTICS Peak Forward On-State Voltage (Note 2) (ITM = 16 A) Gate Trigger Current (Continuous dc) (Note 4) (VD = 12 V; RL = 100 W) Holding Current (Note 4) (VD = 12 V, Gate Open, Initiating Current = 200 mA) Latch Current (Note 4) (VD = 12 V, IG = 200 mA) Gate Trigger Voltage (Continuous dc) (Note 4) (VD = 12 V; RL = 100 W) Gate Non-Trigger Voltage (VD = 12 V, RL = 100 W) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = 67% VDRM, RGK = 1 KW, CGK = 0.1 mF, TJ = 110C) Critical Rate of Rise of On-State Current IPK = 50 A, Pw = 40 msec, diG/dt = 1 A/msec, Igt = 10 mA 2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%. 3. RGK = 1000 Ohms included in measurement. 4. Does not include RGK in measurement. dv/dt di/dt 5.0 - 15 - - 100 V/ms A/ms TJ = 25C TJ = *40C TJ = 110C VTM IGT IH IL VGT VGD - 5.0 - - 0.3 - 0.2 - 25 0.5 0.6 0.65 - - 1.8 200 6.0 8.0 1.0 1.5 - V mA mA mA V V TJ = 25C TJ = 110C IDRM, IRRM mA - - - - 10 500 Symbol Min Typ Max Unit
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MCR8SD, MCR8SM, MCR8SN
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode -
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
P(AV), AVERAGE POWER DISSIPATION (WATTS)
110 TC , CASE TEMPERATURE ( C) 105 100 95 90 85 80 30 75 0 1 2 3 4 5 6 7 8 IT(RMS), RMS ON-STATE CURRENT (AMPS) 60 90 120 180 dc
15 dc
12
9 90 6 30 3 0 0 1 2 3 4 60 120
180
5
6
7
8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 1. Typical RMS Current Derating
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
Figure 2. On-State Power Dissipation
100 TYPICAL @ TJ = 25C MAXIMUM @ TJ = 110C 10 MAXIMUM @ TJ = 25C
100 GATE TRIGGER CURRENT (m A) 90 80 70 60 50 40 30 20 10 0 -40 -25 -10 5 20 35 50 65 80 95 110
1
0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Typical On-State Characteristics
Figure 4. Typical Gate Trigger Current versus Junction Temperature
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MCR8SD, MCR8SM, MCR8SN
VGT, GATE TRIGGER VOLTAGE (VOLTS) 5 20 35 50 65 80 95 110 1000 IH, HOLDING CURRENT (m A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5 20 35 50 65 80 95 110
100
10
1 -40 -25 -10
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Typical Holding Current versus Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus Junction Temperature
1000 IL, LATCHING CURRENT (m A)
100
10
1 -40 -25 -10
5
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (C)
Figure 7. Typical Latching Current versus Junction Temperature
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MCR8SD, MCR8SM, MCR8SN
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 3: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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MCR8S/D

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